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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

source：nature.com

release：Julie

keywords： electrically pumped silicon-based lasers

Time：2016-03-11

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5?A?cm–2, a room-temperature output power exceeding 105?mW and operation up to 120?°C. Over 3,100?h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158?h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105?cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

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